advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance low on-resistance low on-resistance low on-resistance bv dss 30v high vgs max rating voltage high vgs max rating voltage high vgs max rating voltage high vgs max rating voltage r ds(on) 11m surface mount package surface mount package surface mount package surface mount package i d 11.5a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-amb thermal resistance junction-ambient 3 max. 50 /w data and specifications subject to change without notice 200902302 AP6680GM pb free plating product parameter rating drain-source voltage 30 gate-source voltage 25 continuous drain current 3 11.5 continuous drain current 3 9.5 pulsed drain current 1 50 total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.02 thermal data parameter storage temperature range the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =11.5a - - 11 m v gs =4.5v, i d =9.5a - - 18 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =11.5a - 30 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v ,v gs =0v - - 25 ua i gss gate-source leakage v gs = 25v - - 100 na q g total gate charge 2 i d =11.5a - 16.8 - nc q gs gate-source charge v ds =15v - 4.2 - nc q gd gate-drain ("miller") charge v gs =5v - 8 - nc t d(on) turn-on delay time 2 v ds =15v - 8.9 - ns t r rise time i d =1a - 7.3 - ns t d(off) turn-off delay time r g =5.5 , v gs =10v - 25.6 - ns t f fall time r d =10 - 18.6 - ns c iss input capacitance v gs =0v - 1450 - pf c oss output capacitance v ds =25v - 285 - pf c rss reverse transfer capacitance f=1.0mhz - 180 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 1.92 a v sd forward on voltage 2 t j =25 , i s =3.5a, v gs =0v - - 1.3 v notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 125 /w when mounted on min. copper pad. AP6680GM
AP6680GM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 0 10 20 30 40 011223 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 6.0v 4.0v v gs =3.0v 0 10 20 30 40 50 011223 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 6.0v 4.0v v gs =3.0v 0.2 0.8 1.4 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =11.5a v gs =10v 0 20 40 60 80 24681012 v gs (v) r ds(on) (m ) i d =11.5a t c =25
fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance AP6680GM 0.01 0.1 1 10 100 0.1 1 10 100 v ds (v) i d (a) t c =25 o c s in g le pulse 100us 1ms 10ms 100ms 1s 10s d c 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 5 10 15 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a) 0 0.5 1 1.5 2 2.5 3 0 50 100 150 t c , case temperature ( o c) p d (w)
AP6680GM fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature 1 1.5 2 2.5 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 0 3 6 9 12 15 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =11.5a v ds =15v 10 100 1000 10000 1 7 13 19 25 31 v ds (v) c (pf) f =1.0mhz ciss coss crss 0.1 1 10 0 0.4 0.8 1.2 1.6 v sd (v) i s (a) tj=25 o c tj=150 o c
AP6680GM fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge 0.5 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 m a 0.5 x rated v ds to the oscilloscope - + 10 v d g s v ds v gs r g r d
|
